| PART |
Description |
Maker |
| KSD158903 KSD1589 KSD1589YTU KSD1589RTU KSD1589OTU |
NPN Silicon Darlington Transistor
Low Frequency Power Amplifier Low Speed Switching Industrial Use
5 A, 100 V, NPN, Si, POWER TRANSISTOR
|
http://
FAIRCHILD SEMICONDUCTOR CORP
|
| 2SD2165 |
6 A, 100 V, NPN, Si, POWER TRANSISTOR
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
Silicon power transistor
|
NEC[NEC]
|
| 2SC3357 2SC3357-T2 2SC3357RF 2SC3357-T1 |
For amplify high frequency and low noise.
NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
|
NEC Corp.
|
| KSD560 |
NPN (LOW FREQUENCY POWER AMPLIFIER LOW SPEED SWITCHING INDUSTRIAL USE)
|
Samsung semiconductor
|
| 2SD1695 |
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
|
NEC[NEC]
|
| 2SC5214 |
SMALL-SIGNAL TRANSISTOR FOR LOW FREQUENCY POWER AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE
For Low Frequency Amplify Application Silicon Npn Epitaxial Type
|
Isahaya Electronics Corporation
ETC
List of Unclassifed Manufacturers
|
| KSD261 |
NPN (LOW FREQUENCY POWER AMPLIFIER)
|
SAMSUNG[Samsung semiconductor]
|
| 310-025109-022 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-025107-011 |
Filtered Low Noise Ampli er
|
Spectrum Microwave, Inc.
|
| 310-024105-021 024105-021 |
Filtered Low Noise Ampli er
|
API Technologies Corp
Spectrum Microwave, Inc.
|
| 2SD2403 2SD2403GZ 2SD2403-GX-AZ |
NPN epitaxial type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING
TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 3A I(C) | TO-243 晶体管|晶体管|叩| 60V的五（巴西）总裁| 3A条一（c）|43
3 A, 60 V, NPN, Si, POWER TRANSISTOR
|
NEC[NEC]
NEC, Corp.
NEC Corp.
|
